tm FFPF10UA60ST 10 a, 600 v, ultrafast ii diode ?2010 fairchild semiconductor corporation FFPF10UA60ST rev. a www.fairchildsemi.com 1 FFPF10UA60ST features ? ultrafast recovery t rr = 120 ns (@ i f = 10 a) ? max forward voltage, v f = 2.3 v (@ t c = 25c) ? 600 v reverse voltage and high reliability ? avalanche energy rated ? rohs compliant applications ? boost diode in pfc and switching mode power supply 10 a, 600 v, ultrafast ii diode the FFPF10UA60ST is an ultrafast ii diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. it is specially suited for use in switching power supplies and industrial applicationa as welder and ups application. absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics t c = 25 o c unless otherwise noted package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 25 o c 10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 50 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 6.3 o c/w device marking device package reel size tape width quantity FFPF10UA60ST FFPF10UA60ST to-220f - - 50 1. cathode 2. anode 1. cathode 2. anode to-220f-2l may 2010
FFPF10UA60ST 10 a, 600 v, ultrafast ii diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted symbol parameter min. typ. max. unit v f 1 i f = 10 a i f = 10 a t c = 25 o c t c = 125 o c - - 1.8 1.7 2.3 2.2 v i r 1 v r = 600 v v r = 600 v t c = 25 o c t c = 125 o c - - - - 100 500 a t rr i rr q rr i f = 10 a, di/dt = 200 a/s t c = 25 o c 74 6 213 120 10 600 ns a nc w avl avalanche energy ( l = 40 mh) 10 - - mj test circuit and waveforms notes: 1: pulse: test pulse width = 300 s, duty cycle = 2% ?2010 fairchild semiconductor corporation FFPF10UA60ST rev. a
FFPF10UA60ST 10 a, 600 v, ultrafast ii diode www.fairchildsemi.com 3 typical performance characteristics figure 1. typical forward voltage drop figure 2. typical reverse current vs. forward current vs. reverse voltage figure 3. typical junction capacitance figure 4. typical reverse recovery time vs. di/dt figure 5. typical reverse recovery figure 6. forward current derating curve current vs. di/dt 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10000 t c = 125 o c t c = 25 o c t c = 75 o c reverse current , i r [ a ] reverse voltage, v r [v] 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 100 200 300 400 500 0 30 60 90 120 150 t c = 125 o c i f = 10a t c = 25 o c t c = 75 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] 0.1 1 10 100 0 10 20 30 40 capa c itances , cj [pf] typical capacitance at 0v = 36pf rever se voltage, v r [v] 100 200 300 400 0 3 6 9 12 t c = 75 o c i f = 10a t c = 25 o c t c = 125 o c reverse recovery current, i rr [a] di/dt [ a/ s ] 25 50 75 100 125 150 0 2 4 6 8 10 12 average forward current, i f(av) [a] case temperature, t c [ o c ] ?2010 fairchild semiconductor corporation FFPF10UA60ST rev. a
FFPF10UA60ST 10 a, 600 v, ultrafast ii diode www.fairchildsemi.com 4 mechanical dimensions dimensions in millimeters to-220f 2l 2.54 0.20 0.80 0.10 0.35 0.10 2.76 0.20 max1.47 (1.00x45) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?3.18 0.10 2.54typ [2.54 0.20] 2.54typ [2.54 0.20] 0.50 +0.10
C0.05 ?2010 fairchild semiconductor corporation FFPF10UA60ST rev. a
FFPF10UA60ST 10 a, 600 v, ultrafast ii diode www.fairchildsemi.com 5 ?2010 fairchild semiconductor corporation FFPF10UA60ST rev. a
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